PMF400UN,115 datasheet

Маркировка

PMF400UN,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMF400UN,115 Current - Continuous Drain (id) @ 25?° C: 830mA Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V Input Capacitance (ciss) @ Vds: 43pF @ 25V Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 560mW Rds On (max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 1V @ 250?µA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 0.83 A Resistance Drain-Source RDS (on): 480 mOhms at 4.5 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 7.5 ns Minimum Operating Temperature: - 55 C Power Dissipation: 560 mW Rise Time: 7.5 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: PMF400UN T/R Other Names: 568-3244-2, 934057723115, PMF400UN T/R
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12 шт.
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