PEMB10,115 datasheet

Маркировка

PEMB10,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PEMB10,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: - ID_COMPONENTS: 1947778 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: PNP Transistor Type: 2 PNP - Pre-Biased (Dual) Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 0.047 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934056870115, PEMB10 T/R
Количество страниц

15 шт.
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137,55 KB