PDTA114TE,115

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PDTA114TE,115 datasheet

• Маркировка
  PDTA114TE,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PDTA114TE,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V ID_COMPONENTS: 1947889 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Peak Dc Collector Current: 100 mA Power - Max: 150mW Resistor - Base (r1) (ohms): 10K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 10 KOhm Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934051770115, PDTA114TE T/R
• Количество страниц
  11 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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Файл формата Pdf 75,88 KB