NXP Semiconductors PBSS9110X,135 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949682 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 2W Power Dissipation: 2000 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 at 1 mA at 5 V, 150 at 250 mA at 5 V, 150 at 0.5 A at 5 V, 125 at 1 A at 5 V DC Current Gain hFE Max: 150 at 1 mA at 5 V Maximum Power Dissipation: 2000 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS9110X Other Names: 934057976135, PBSS9110X /T3