PBSS9110T,215 datasheet

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Маркировка

PBSS9110T,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS9110T,215 Collector- Emitter Voltage Vceo Max: - 100 V Configuration: Single Continuous Collector Current: - 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 150 Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949772 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 3 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 480mW Power Dissipation: 300 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: - 100 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 DC Current Gain hFE Max: 150 at 1 mA at 5 V Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS9110T T/R Other Names: 568-4348-2, 934057669215, PBSS9110T T/R
Количество страниц

12 шт.
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PDF
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115,44 KB