PBSS8110Y,115 datasheet

Маркировка

PBSS8110Y,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS8110Y,115 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 250mA, 10V Frequency - Transition: 100MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 0.5 A at 10 V, 80 at 1 A at 10 V DC Current Gain hFE Max: 150 at 1 mA at 10 V Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PBSS8110Y T/R Other Names: 934057982115, PBSS8110Y T/R
Количество страниц

13 шт.
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158,59 KB