PBSS4250X,135 datasheet

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Маркировка

PBSS4250X,135
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS4250X,135 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Continuous Collector Current: 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 300 Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949490 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1W Power Dissipation: 550 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 320mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 300 DC Current Gain hFE Max: 300 at 0.1 A at 2 V Maximum Power Dissipation: 550 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS4250X Other Names: 934057967135, PBSS4250X /T3
Количество страниц

9 шт.
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82,27 KB