PBSS304PD,115 datasheet

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• Маркировка
  PBSS304PD,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS304PD,115 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Quad Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 155 @ 500mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 110MHz ID_COMPONENTS: 1949499 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 110 MHz (Typ) Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Power Dissipation: 2500 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 540mV @ 500mA, 5A Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 110 MHz DC Collector/Base Gain hfe Min: 155 at 500 mA at 2 V, 140 at 1 A at 2 V, 105 at 2 A at 2 V, 60 at 3 A at 2 V, 30 at 4 A at 2 V, 20 at 5 A at 2 V DC Current Gain hFE Max: 155 at 500 mA at 2V Maximum Power Dissipation: 360 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS304PD T/R Other Names: 568-4176-2, 934060016115, PBSS304PD T/R
• Количество страниц
  15 шт.
• Формат
  PDF

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• Размер файла
  128,92 KB

PBSS304PD,115 datasheet скачать

PBSS304PD,115 datasheet