PBSS303PD,115 datasheet

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Маркировка

PBSS303PD,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS303PD,115 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Quad Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 110MHz ID_COMPONENTS: 1949651 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 110 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Power Dissipation: 2500 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 675mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 110 MHz DC Collector/Base Gain hfe Min: 180 at 500 mA at 2 V, 160 at 1 A at 2 V, 130 at 2 A at 2 V, 95 at 3 A at 2 V, 60 at 4 A at 2 V, 35 at 5 A at 2 V, 20 at 6 A at 2 V DC Current Gain hFE Max: 180 at 500 mA at 2 V Maximum Power Dissipation: 2500 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS303PD T/R Other Names: 934060015115, PBSS303PD T/R
Количество страниц

16 шт.
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170,26 KB