PBSS2515VS,115 datasheet

Маркировка

PBSS2515VS,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS2515VS,115 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 420MHz Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 200mW Series: - Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Dual Transistor Polarity: NPN Collector- Base Voltage VCBO: 15 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 420 MHz DC Collector/Base Gain hfe Min: 200 at 10 mA at 2 V, 150 at 100 mA at 2 V, 90 at 500 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 200 at 10 mA at 2 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: PBSS2515VS T/R Other Names: 934056768115, PBSS2515VS T/R
Количество страниц

9 шт.
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74,44 KB