PBLS6003D,115 datasheet

Маркировка

PBLS6003D,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBLS6003D,115 Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 60 V @ PNP Configuration: Dual Current - Collector (ic) (max): 100mA, 700mA Current - Collector Cutoff (max): 1?µA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 500mA, 5V Frequency - Transition: 185MHz ID_COMPONENTS: 1947898 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: 100 mA @ NPN or 1000 mA @ PNP Power - Max: 600mW Resistor - Base (r1) (ohms): 10K Resistor - Emitter Base (r2) (ohms): 10K Series: - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 10 KOhm @ NPN Typical Resistor Ratio: 1 @ NPN Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA / 340mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 50V, 60V Other Names: 934059266115, PBLS6003D T/R
Количество страниц

16 шт.
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