PBHV9040Z,115 datasheet

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Маркировка

PBHV9040Z,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBHV9040Z,115 Collector- Emitter Voltage Vceo Max: - 400 V Configuration: Dual Continuous Collector Current: - 250 mA Current - Collector (ic) (max): 250mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V Emitter- Base Voltage Vebo: - 6 V Frequency - Transition: 55MHz ID_COMPONENTS: 1949549 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 500 mA Maximum Operating Frequency: 55 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.4W Power Dissipation: 700 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 200mV @ 20mA, 100mA Voltage - Collector Emitter Breakdown (max): 400V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 500 V Collector- Emitter Voltage VCEO Max: - 400 V Emitter- Base Voltage VEBO: - 6 V Maximum DC Collector Current: - 500 mA Gain Bandwidth Product fT: 55 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 100 at 50 mA at 10 V Maximum Power Dissipation: 700 mW Factory Pack Quantity: 1000 Part # Aliases: PBHV9040Z T/R Other Names: 934061409115::PBHV9040Z T/R::PBHV9040Z T/R
Количество страниц

12 шт.
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128,91 KB