PBHV8540T,215 datasheet

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Маркировка

PBHV8540T,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBHV8540T,215 Collector- Emitter Voltage Vceo Max: 400 V Configuration: Single Continuous Collector Current: 500 mA Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 300mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 30MHz ID_COMPONENTS: 1949764 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 30 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 300mW Power Dissipation: 300 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 60mA, 300mA Voltage - Collector Emitter Breakdown (max): 400V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 500 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 30 MHz DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 100 at 50 mA at 10 V Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Part # Aliases: PBHV8540T T/R Other Names: 934061414215::PBHV8540T T/R::PBHV8540T T/R
Количество страниц

12 шт.
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107,79 KB