BUK9610-100B,118 datasheet

Маркировка

BUK9610-100B,118
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9610-100B,118 Configuration: Single Continuous Drain Current: 110 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 86nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950459 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 9.7 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0097 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.0097 Ohms Fall Time: 94 ns Rise Time: 110 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 250 ns Part # Aliases: /T3 BUK9610-100B Other Names: 934057115118::BUK9610-100B /T3::BUK9610-100B /T3
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