BUK951R9-40E datasheet

Маркировка

BUK951R9-40E
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK951R9-40E Mfr Package Description: PLASTIC, SC-46, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 120 A DS Breakdown Voltage-Min: 40 V Avalanche Energy Rating (Eas): 1008 mJ Drain-source On Resistance-Max: 0.0018 ohm Pulsed Drain Current-Max (IDM): 1257 A
Количество страниц

13 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

210,68 KB