BSR57,215 datasheet

Маркировка

BSR57,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BSR57,215 Configuration: Single Continuous Drain Current: 100 mA Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V Drain Current (idss At Vgs=0): 20 mA to 100 mA Drain Source Voltage Vds: 40 V Drain To Source Voltage (vdss): 40V Fet Type: N-Channel Gate-source Breakdown Voltage: 40 V Gate-source Cutoff Voltage: 2 V to 6 V ID_COMPONENTS: 1949153 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: 40 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Power - Max: 250mW Power Dissipation: 250 mW Resistance - Rds(on): 40 Ohm Resistance Drain-source Rds (on): 40 Ohms Transistor Polarity: N-Channel Voltage - Breakdown (v(br)gss): 40V Voltage - Cutoff (vgs Off) @ Id: 5V @ 0.5nA Product Category: Transistors RF JFET RoHS: yes Resistance Drain-Source RDS (on): 40 Ohms Drain Source Voltage VDS: 40 V Gate-Source Cutoff Voltage: 2 V to 6 V Gate-Source Breakdown Voltage: 40 V Drain Current (Idss at Vgs=0): 20 mA to 100 mA Factory Pack Quantity: 3000 Part # Aliases: BSR57 T/R Other Names: 933410750215, BSR57 T/R
Количество страниц

6 шт.
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36,96 KB