BSR31,115

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BSR31,115 datasheet

Маркировка

BSR31,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BSR31,115 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949847 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.35W Power Dissipation: 1350 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 70 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 30 at 100 uA at 5 V, 100 at 100 mA at 5 V, 50 at 500 mA at 5 V DC Current Gain hFE Max: 30 at 100 uA at 5 V Maximum Power Dissipation: 1350 mW Factory Pack Quantity: 1000 Part # Aliases: BSR31 T/R Other Names: 933418120115, BSR31 T/R
Количество страниц

7 шт.
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