BF991,215

Сообщить об ошибке

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

BF991,215 datasheet

Маркировка

BF991,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF991,215 Application: VHF Channel Mode: Depletion Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.02 A Current - Test: 10mA Current Rating: 20mA Drain Source Voltage (max): 20V Drain-source Breakdown Voltage: 20 V Frequency: 100MHz Gain: 29dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949181 Input Capacitance (typ)@vds: 2.1@10V@Gate 1/1@10V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 0.7dB Noise Figure (max): 2dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 1.1@10VpF Package / Case: SOT-143, SOT-143B, TO-253AA Package Type: SOT Pin Count: 3 +Tab Power - Output: - Power Dissipation: 200 mW Power Dissipation (max): 200mW Power Gain (typ)@vds: 29@10VdB Reverse Capacitance (typ): 0.02@10VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 20V Voltage - Test: 10V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF991 T/R Other Names: 568-1970-2, 933642000215, BF991 T/R
Количество страниц

7 шт.
Форматы файла

HTML, PDF
(Для просмотра требуется Adobe Acrobat Reader)