BF1211,215 datasheet

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• Маркировка
  BF1211,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF1211,215 Application: VHF/UHF Channel Mode: Enhancement Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 15mA Current Rating: 30mA Drain Source Voltage (max): 6V Drain-source Breakdown Voltage: 6 V Frequency: 400MHz Gain: 29dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949191 Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 0.9dB Noise Figure (max): 2dB Number Of Elements: 2 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 0.9@5VpF Package / Case: SOT-143, SOT-143B, TO-253AA Package Type: SOT Pin Count: 3 +Tab Power - Output: - Power Dissipation: 180 mW Power Dissipation (max): 180mW Power Gain (typ)@vds: 34@5VdB Reverse Capacitance (typ): 0.015@5VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 6V Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF1211 Other Names: 568-1959-2, 934057516215, BF1211
• Количество страниц
  16 шт.
• Формат
  PDF

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• Размер файла
  146,36 KB

BF1211,215 datasheet скачать

BF1211,215 datasheet