BF1208D,115 datasheet

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• Маркировка
  BF1208D,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF1208D,115 Configuration: Dual Continuous Drain Current: 30 mA Current - Test: 19mA Current Rating: 30mA Drain-source Breakdown Voltage: 6 V Frequency: 400MHz Gain: 32dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949177 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 0.9dB Package / Case: SS Mini-6 (SOT-666) Power - Output: - Power Dissipation: 180 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 6V Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 4000 Part # Aliases: BF1208D T/R Other Names: 934060901115, BF1208D T/R
• Количество страниц
  22 шт.
• Формат
  PDF

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• Размер файла
  250,74 KB

BF1208D,115 datasheet скачать

BF1208D,115 datasheet