IPW60R041C6 datasheet

Маркировка

IPW60R041C6
Производитель

Infineon Technologies
Описание

Infineon Technologies IPW60R041C6 Continuous Drain Current: 77.5 A Current - Continuous Drain (id) @ 25?° C: 77.5A Drain Source Voltage Vds: 600V Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 290nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 2668054 Input Capacitance (ciss) @ Vds: 6530pF @ 10V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * On Resistance Rds(on): 0.037ohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: TO-247-3 Power - Max: 481W Power Dissipation: 481 W Rds On (max) @ Id, Vgs: 41 mOhm @ 44.4A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.037 Ohms Rohs Compliant: Yes Series: CoolMOS?„? Transistor: RoHS Compliant Transistor Case Style: TO-247 Transistor Polarity: N Channel Vgs(th) (max) @ Id: 3.5V @ 2.96mA Voltage Vgs Max: 30V RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.037 Ohms Part # Aliases: IPW60R041C6FKSA1 IPW60R041C6XK SP000718886
Количество страниц

13 шт.
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