IPP50CN10NGXKSA1 datasheet

Маркировка

IPP50CN10NGXKSA1
Производитель

Infineon Technologies
Описание

Infineon Technologies IPP50CN10NGXKSA1 Configuration: Single Continuous Drain Current: 20 A Drain-source Breakdown Voltage: 100 V Fall Time: 3 ns Forward Transconductance Gfs (max / Min): 21 S Gate Charge Qg: 12 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220-3 Part # Aliases: IPP50CN10NGHKSA1 SP000680930 Power Dissipation: 44 W Resistance Drain-source Rds (on): 38 mOhms Rise Time: 4 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 38 mOhms Forward Transconductance gFS (Max / Min): 21 S
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12 шт.
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