IPD60R2K0C6 datasheet

Маркировка

IPD60R2K0C6
Производитель

Infineon Technologies
Описание

Infineon Technologies IPD60R2K0C6 Continuous Drain Current: 2.4 A Current - Continuous Drain (id) @ 25?° C: 2.4A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 6.7nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 140pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 22.3W Power Dissipation: 22.3 W Rds On (max) @ Id, Vgs: 2 Ohm @ 760mA, 10V Resistance Drain-source Rds (on): 1.8 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 60?µA RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 1.8 Ohms Part # Aliases: IPD60R2K0C6BTMA1 IPD60R2K0C6XT SP000799132 Other Names: IPD60R2K0C6TR
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14 шт.
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