IPA032N06N3 G datasheet

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• Маркировка
  IPA032N06N3 G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPA032N06N3 G Configuration: Single Continuous Drain Current: 84 A Drain-source Breakdown Voltage: 60 V Factory Pack Quantity: 500 Fall Time: 20 ns Forward Transconductance Gfs (max / Min): 135 S Gate Charge Qg: 124 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220-3 FullPAK Part # Aliases: IPA032N06N3GXK IPA032N06N3GXKSA1 SP000453608 Power Dissipation: 41 W Product Category: MOSFET Resistance Drain-source Rds (on): 3.2 mOhms Rise Time: 120 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 62 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.2 mOhms Forward Transconductance gFS (Max / Min): 135 S Typical Turn-Off Delay Time: 62 ns
• Количество страниц
  9 шт.
• Формат
  PDF

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• Размер файла
  573,42 KB

IPA032N06N3 G datasheet скачать

IPA032N06N3 G datasheet