FDG326P_Q datasheet

Маркировка

FDG326P_Q
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FDG326P_Q Configuration: Single Quad Drain Continuous Drain Current: - 1.5 A Drain-source Breakdown Voltage: - 20 V Fall Time: 13 ns Forward Transconductance Gfs (max / Min): 5.3 S Gate-source Breakdown Voltage: +/- 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70-6 Power Dissipation: 0.75 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.14 Ohms Rise Time: 13 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 18 ns Drain-Source Breakdown Voltage: - 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 0.14 Ohms Forward Transconductance gFS (Max / Min): 5.3 S Typical Turn-Off Delay Time: 18 ns
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13 шт.
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