FDB035N10A datasheet

Маркировка

FDB035N10A
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FDB035N10A Continuous Drain Current: 214 A Continuous Drain Current Id: 120A Drain Source Voltage Vds: 100V Drain-source Breakdown Voltage: 100 V Fall Time: 11 ns Forward Transconductance Gfs (max / Min): 167 S Gate Charge Qg: 89 nC Gate-source Breakdown Voltage: 20 V Mounting Style: SMD/SMT On Resistance Rds(on): 0.003ohm Package / Case: D2PAK Power Dissipation: 333 W Power Dissipation Pd: 333W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 3 mOhms Rise Time: 54 ns Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 3 mOhms Forward Transconductance gFS (Max / Min): 167 S Factory Pack Quantity: 800
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