FCH47N60N datasheet

Маркировка

FCH47N60N
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FCH47N60N Configuration: Single Continuous Drain Current: 47 A Current - Continuous Drain (id) @ 25?° C: 47A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 56 S Gate Charge (qg) @ Vgs: 151nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Input Capacitance (ciss) @ Vds: 6700pF @ 100V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 368W Power Dissipation: 368 W Rds On (max) @ Id, Vgs: 62 mOhm @ 23.5A, 10V Resistance Drain-source Rds (on): 51.5 mOhms Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 51.5 mOhms Forward Transconductance gFS (Max / Min): 56 S Factory Pack Quantity: 150
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8 шт.
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