01.05.2024
MUN5133T1G
Характеристики MUN5133T1G
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ПроизводительON Semiconductor
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Transistor TypePNP - Pre-Biased
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Current - Collector (Ic) (Max)100mA
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Voltage - Collector Emitter Breakdown (Max)50V
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Resistor - Base (R1) (Ohms)4.7K
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Resistor - Emitter Base (R2) (Ohms)47K
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DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
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Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
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Current - Collector Cutoff (Max)500nA
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Frequency - Transition-
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Power - Max202mW
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Тип монтажаSurface Mount
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Исполнение / КорпусSC-70-3, SOT-323-3
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УпаковкаTape & Reel (TR)
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Supplier Device Package
Полная характеристикаСкрыть
Новости электроники
30.04.2024
29.04.2024