Результаты поиска VNN7NV04PTR-E

Найдено 2 результатов.

• VNN7NV04PTR-E
  STMicroelectronics — STMicroelectronics VNN7NV04PTR-E Current - Output / Channel: - Current - Peak Output: 9A Input Type: Non-Inverting Mounting Type: Surface Mount Number Of Outputs: 1 On-state Resistance: 60 mOhm Operating Temperature: -40В°C ~ 150В°C Package / Case: * Series: OMNIFET IIв„ў Type: Low Side Voltage - Supply: - Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 45 V Continuous Drain Current: 30 uA Resistance Drain-Source RDS (on): 60 mOhms Mounting Style: SMD/SMT Fall Time: 350 ns Forward Transconductance gFS (Max / Min): 9 S Gate Charge Qg: 18 nC Power Dissipation: 7 W Rise Time: 470 ns
• VNN7NV04PTR-E
  STMicroelectronics — STMicroelectronics VNN7NV04PTR-E Current - Output / Channel: - Current - Peak Output: 9A Input Type: Non-Inverting Mounting Type: Surface Mount Number Of Outputs: 1 On-state Resistance: 60 mOhm Operating Temperature: -40В°C ~ 150В°C Package / Case: * Series: OMNIFET IIв„ў Type: Low Side Voltage - Supply: - Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 45 V Continuous Drain Current: 30 uA Resistance Drain-Source RDS (on): 60 mOhms Mounting Style: SMD/SMT Fall Time: 350 ns Forward Transconductance gFS (Max / Min): 9 S Gate Charge Qg: 18 nC Power Dissipation: 7 W Rise Time: 470 ns