Результаты поиска VLF10040T-470M1R7

Найдено 3 результатов.

• K4B1G0446D-HCF8
  SAMSUNG [Samsung semiconductor] — 1Gb D-die DDR3 SDRAM Specification
• K4B1G0446D-HCF7
  Samsung Semiconductor —
• VLF10040T-470M1R7
  TDK Corporation — TDK Corporation VLF10040T-470M1R7 Applications: Power Line Current: 1.7A Current - Saturation: - Current - Temperature Rise: 1.9A Dc Current Rating: 1.9A Dc Resistance (dcr): 124 mOhm Max Dc Resistance Max: 124mohm Dimensions: 9.7 mm W x 10 mm L x 4 mm H Frequency - Test: 100kHz ID_COMPONENTS: 1267126 Inductance: 47µH Inductance Tolerance: ± 20% Inductor Case Style: SMD Maximum Dc Current: 1.9 Amps Maximum Dc Resistance: 124 mOhms Mounting Type: Surface Mount No. Of Pins: 2 Operating Temperature: -40В°C ~ 105В°C Operating Temperature Range: - 40 C to + 105 C Package / Case: 0.394" L x 0.382" W x 0.157" H (10.00mm x 9.70mm x 4.00mm) Product: Power Inductor Q @ Freq: - Self Resonant Freq: - Series: VLF Shielding: Shielded Termination Style: SMD/SMT Test Frequency: 100 KHz Tolerance: В±20% Type: - Other Names: 445-3566-2