Результаты поиска UPW0J332MHH

Найдено 10 результатов.

• UPW0J332MHH
  Nichicon — Low Impedance Radial Aluminum Electrolytic Capacitors - 105Degree 3300uF 6.3V 105c 12.5x20 20% 5LS
• PSMN070-200P
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• UPW0J332MHH
  Nichicon — CAP 3300UF 6.3V ELECT PW RADIAL
• PSMN070-200B
  Philips Semiconductors —
• PSMN070-200B
  NXP Semiconductors —
• PSMN070-200B
  NXP Semiconductors —
• PSMN070-200P,127
  NXP Semiconductors — NXP Semiconductors PSMN070-200P,127 Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 200V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 77nC @ 10V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 250W Rds On (max) @ Id, Vgs: 70 mOhm @ 17A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 35 A Resistance Drain-Source RDS (on): 0.07 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 90 ns Minimum Operating Temperature: - 55 C Power Dissipation: 250 W Rise Time: 100 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 80 ns Part # Aliases: PSMN070-200P Other Names: 934055718127::PSMN070-200P::PSMN070-200P
• PSMN070-200B,118
  NXP Semiconductors — NXP Semiconductors PSMN070-200B,118 Configuration: Single Continuous Drain Current: 35 A Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 77nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950647 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 250W Power Dissipation: 250000 mW Rds On (max) @ Id, Vgs: 70 mOhm @ 17A, 10V Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.07 Ohms Fall Time: 90 ns Rise Time: 100 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 80 ns Part # Aliases: /T3 PSMN070-200B Other Names: 934055719118::PSMN070-200B /T3::PSMN070-200B /T3
• PSMN070-200B /T3
  NXP Semiconductors — NXP Semiconductors PSMN070-200B /T3 Configuration: Single Continuous Drain Current: 35 A Drain-source Breakdown Voltage: 200 V Factory Pack Quantity: 800 Fall Time: 90 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-404 Part # Aliases: PSMN070-200B,118 Power Dissipation: 250 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.07 Ohms Rise Time: 100 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 80 ns
• PSMN070-200-SERIES-HG
  NXP Semiconductors —