Результаты поиска TPCF8B01(TE85L,F)
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TPCF8B01(TE85L,F) Configuration: Single Dual Drain Continuous Drain Current: 2.7 A Current - Continuous Drain (id) @ 25В° C: 2.7A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: - 20 V Fet Feature: Diode (Isolated) Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 6nC @ 5V Gate-source Breakdown Voltage: 8 V Input Capacitance (ciss) @ Vds: 470pF @ 10V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: * Power - Max: 1.35W Power Dissipation: 1.35 W Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V Resistance Drain-source Rds (on): 0.11 Ohms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 1.2V @ 200ВµA Other Names: TPCF8B01(TE85L,F), TPCF8B01FTR