Результаты поиска TPCF8303(TE85L,F)
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TPCF8303(TE85L,F) Configuration: Dual Continuous Drain Current: 3 A Current - Continuous Drain (id) @ 25В° C: 3A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: - 20 V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Gate Charge (qg) @ Vgs: 11nC @ 5V Gate-source Breakdown Voltage: 8 V Input Capacitance (ciss) @ Vds: 860pF @ 10V Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: VS-8 (2-3U1B) Power - Max: 530mW Power Dissipation: 1.35 W Rds On (max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V Resistance Drain-source Rds (on): 0.058 Ohms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 1.2V @ 200ВµA Other Names: TPCF8303(TE85L,F), TPCF8303FTR