Результаты поиска TPCF8001(TE85L,F)
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TPCF8001(TE85L,F) Current - Continuous Drain (id) @ 25?° C: 7A Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25.4nC @ 10V Input Capacitance (ciss) @ Vds: 1270pF @ 10V Mounting Type: Surface Mount Package / Case: VS-8 (2-3U1A) Power - Max: 700mW Rds On (max) @ Id, Vgs: 23 mOhm @ 3.5A, 10V Series: - Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: TPCF8001(TE85L,F), TPCF8001FTR