Результаты поиска TLP781F(GR,F)
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP781F(GR,F) Configuration: 1 Channel Current - Dc Forward (if): 60mA Current - Output / Channel: 50mA Current Transfer Ratio: 100 % to 300 % Current Transfer Ratio (max): 300% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Forward Current: 10 mA Input Type: DC Isolation Voltage: 5000 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 110 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 5 V Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Mounting Type: Through Hole Number Of Channels: 1 Output Device: Transistor Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Series: - Vce Saturation (max): 400mV Voltage - Isolation: 5000Vrms Voltage - Output: 80V Other Names: TLP781FGRF