Результаты поиска TLE2061IDG4

Найдено 2 результатов.

• TLE2061IDG4
  TI (Texas Instruments) — TI (Texas Instruments) TLE2061IDG4 -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 4pA Current - Output / Channel: 80mA Current - Supply: 290ВµA Gain Bandwidth Product: 2MHz Mounting Type: Surface Mount Number Of Circuits: 1 Operating Temperature: -40В°C ~ 85В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: Excaliburв„ў Slew Rate: 3.4 V/Вµs Voltage - Input Offset: 600ВµV Voltage - Supply, Single/dual (В±): 7 V ~ 36 V, В±3.5 V ~ 18 V Product Category: Operational Amplifiers - Op Amps RoHS: yes Number of Channels: 1 Common Mode Rejection Ratio (Min): 65 dB Input Offset Voltage: 3.1 mV Input Bias Current (Max): 4 nA Operating Supply Voltage: +/- 3.5 V to +/- 18 V Mounting Style: SMD/SMT Shutdown: No Maximum Operating Temperature: + 85 C Maximum Dual Supply Voltage: +/- 18 V Minimum Dual Supply Voltage: +/- 3.5 V Minimum Operating Temperature: - 40 C Factory Pack Quantity: 75 Supply Current: 0.35 mA Technology: BiFET Voltage Gain dB: 98.06 dB
• TLE2061IDG4
  TI (Texas Instruments) — TI (Texas Instruments) TLE2061IDG4 -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 4pA Current - Output / Channel: 80mA Current - Supply: 290ВµA Gain Bandwidth Product: 2MHz Mounting Type: Surface Mount Number Of Circuits: 1 Operating Temperature: -40В°C ~ 85В°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: Excaliburв„ў Slew Rate: 3.4 V/Вµs Voltage - Input Offset: 600ВµV Voltage - Supply, Single/dual (В±): 7 V ~ 36 V, В±3.5 V ~ 18 V Product Category: Operational Amplifiers - Op Amps RoHS: yes Number of Channels: 1 Common Mode Rejection Ratio (Min): 65 dB Input Offset Voltage: 3.1 mV Input Bias Current (Max): 4 nA Operating Supply Voltage: +/- 3.5 V to +/- 18 V Mounting Style: SMD/SMT Shutdown: No Maximum Operating Temperature: + 85 C Maximum Dual Supply Voltage: +/- 18 V Minimum Dual Supply Voltage: +/- 3.5 V Minimum Operating Temperature: - 40 C Factory Pack Quantity: 75 Supply Current: 0.35 mA Technology: BiFET Voltage Gain dB: 98.06 dB