Результаты поиска TISP5110H3BJR-S

Найдено 2 результатов.

• TISP5110H3BJR-S
  Bourns — Bourns TISP5110H3BJR-S Breakover Current Ibo Max: 60 A Forward Voltage Drop: 3 V Mounting Style: SMD/SMT Off-state Leakage Current @ Vdrm Idrm: 0.005 mA Package / Case: DO-214AA Rated Repetitive Off-state Voltage Vdrm: 80 V Product Category: Sidacs RoHS: yes Breakover Voltage VBO: - 110 V Breakover Current IBO Max: +/- 600 mA Non Repetitive On-State Current: 55 A, 60 A Rated Repetitive Off-State Voltage VDRM: - 80 V Off-State Leakage Current @ VDRM IDRM: - 5 uA Holding Current (Ih Max): +/- 600 mA On-State Voltage: - 3 V Off-State Capacitance CO: 65 pF to 240 pF Maximum Operating Temperature: + 85 C Current Rating: - 5 A Minimum Operating Temperature: - 40 C Operating Junction Temperature: - 40 C to + 150 C Factory Pack Quantity: 3000
• TISP5110H3BJR-S
  Bourns — Bourns TISP5110H3BJR-S Breakover Current Ibo Max: 60 A Forward Voltage Drop: 3 V Mounting Style: SMD/SMT Off-state Leakage Current @ Vdrm Idrm: 0.005 mA Package / Case: DO-214AA Rated Repetitive Off-state Voltage Vdrm: 80 V Product Category: Sidacs RoHS: yes Breakover Voltage VBO: - 110 V Breakover Current IBO Max: +/- 600 mA Non Repetitive On-State Current: 55 A, 60 A Rated Repetitive Off-State Voltage VDRM: - 80 V Off-State Leakage Current @ VDRM IDRM: - 5 uA Holding Current (Ih Max): +/- 600 mA On-State Voltage: - 3 V Off-State Capacitance CO: 65 pF to 240 pF Maximum Operating Temperature: + 85 C Current Rating: - 5 A Minimum Operating Temperature: - 40 C Operating Junction Temperature: - 40 C to + 150 C Factory Pack Quantity: 3000