Результаты поиска STGW50HF60SD

Найдено 2 результатов.

• STGW50HF60SD
  STMicroelectronics — STMicroelectronics STGW50HF60SD Collector Emitter Voltage Vces: 600V Current - Collector (ic) (max): 110A Dc Collector Current: 110A Igbt Type: - Input Type: Standard Lead Free Status / Rohs Status: Supplier Unconfirmed Mounting Type: * No. Of: RoHS Compliant Operating Temperature Range: -55°C To +150°C Package / Case: * Power - Max: 284W Power Dissipation Pd: 284W Series: - Transistor Case Style: TO-247 Transistor Type: IGBT Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A Voltage - Collector Emitter Breakdown (max): 600V Product Category: IGBT Transistors RoHS: yes Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.15 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 110 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 284 W Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Other Names: 497-11089-5
• STGW50HF60SD
  STMicroelectronics — STMicroelectronics STGW50HF60SD Collector Emitter Voltage Vces: 600V Current - Collector (ic) (max): 110A Dc Collector Current: 110A Igbt Type: - Input Type: Standard Lead Free Status / Rohs Status: Supplier Unconfirmed Mounting Type: * No. Of: RoHS Compliant Operating Temperature Range: -55°C To +150°C Package / Case: * Power - Max: 284W Power Dissipation Pd: 284W Series: - Transistor Case Style: TO-247 Transistor Type: IGBT Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A Voltage - Collector Emitter Breakdown (max): 600V Product Category: IGBT Transistors RoHS: yes Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.15 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 110 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 284 W Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Other Names: 497-11089-5