Результаты поиска STGP35N35LZ

Найдено 3 результатов.

• STGP35N35LZ
  STMicroelectronics — STMicroelectronics STGP35N35LZ Product Category: IGBT Transistors RoHS: yes Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 40 A Gate-Emitter Leakage Current: 830 uA Power Dissipation: 176 W Maximum Operating Temperature: + 175 C Package / Case: TO-220 Minimum Operating Temperature: - 55 C Mounting Style: Through Hole
• STGP35N35LZ
  STMicroelectronics — STMicroelectronics STGP35N35LZ Product Category: IGBT Transistors RoHS: yes Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 40 A Gate-Emitter Leakage Current: 830 uA Power Dissipation: 176 W Maximum Operating Temperature: + 175 C Package / Case: TO-220 Minimum Operating Temperature: - 55 C Mounting Style: Through Hole
• STGP35N35LZ
  STMicroelectronics — STMicroelectronics STGP35N35LZ Product Category: IGBT Transistors RoHS: yes Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 40 A Gate-Emitter Leakage Current: 830 uA Power Dissipation: 176 W Maximum Operating Temperature: + 175 C Package / Case: TO-220 Minimum Operating Temperature: - 55 C Mounting Style: Through Hole