Результаты поиска SST38VF6401-90-5I-EKE

Найдено 3 результатов.

• SST38VF6401-90-5I-EKE
  SST (Silicon Storage Technology) — Microchip Technology SST38VF6401-90-5I-EKE Format - Memory: FLASH ID_COMPONENTS: 1835500 Interface: Parallel Memory Size: 64M (4M x 16) Memory Type: FLASH Operating Temperature: -40В°C ~ 85В°C Package / Case: 48-TFSOP (0.472", 12.0mm Width) Speed: 90ns Voltage - Supply: 2.7 V ~ 3.6 V RoHS: yes Architecture: Sector Erase Timing Type: Asynchronous Interface Type: Parallel Access Time: 90 ns Supply Voltage - Max: 3.6 V Supply Voltage - Min: 2.7 V Maximum Operating Current: 18 mA Mounting Style: SMD/SMT
• SST38VF6401-90-5I-EKE
  Microchip Technology — Microchip Technology SST38VF6401-90-5I-EKE Format - Memory: FLASH ID_COMPONENTS: 1835500 Interface: Parallel Memory Size: 64M (4M x 16) Memory Type: FLASH Operating Temperature: -40В°C ~ 85В°C Package / Case: 48-TFSOP (0.472", 12.0mm Width) Speed: 90ns Voltage - Supply: 2.7 V ~ 3.6 V RoHS: yes Architecture: Sector Erase Timing Type: Asynchronous Interface Type: Parallel Access Time: 90 ns Supply Voltage - Max: 3.6 V Supply Voltage - Min: 2.7 V Maximum Operating Current: 18 mA Mounting Style: SMD/SMT
• SST38VF6401-90-5I-EKE
  Microchip Technology — Microchip Technology SST38VF6401-90-5I-EKE Format - Memory: FLASH ID_COMPONENTS: 1835500 Interface: Parallel Memory Size: 64M (4M x 16) Memory Type: FLASH Operating Temperature: -40В°C ~ 85В°C Package / Case: 48-TFSOP (0.472", 12.0mm Width) Speed: 90ns Voltage - Supply: 2.7 V ~ 3.6 V RoHS: yes Architecture: Sector Erase Timing Type: Asynchronous Interface Type: Parallel Access Time: 90 ns Supply Voltage - Max: 3.6 V Supply Voltage - Min: 2.7 V Maximum Operating Current: 18 mA Mounting Style: SMD/SMT