Результаты поиска SPP11N60C3

Найдено 6 результатов.

• SPP11N60C3
  Infineon Technologies — MOSFET N-CH 650V 11A TO-220AB
• SPP11N60C3XK
  Infineon Technologies — Infineon Technologies SPP11N60C3XK Channel Mode: Enhancement Drain Current (max): 11A Drain Efficiency: Not Required% Drain-source On-res: 0.38Ohm Drain-source On-volt: 600V Frequency (max): Not RequiredMHz Gate-source Voltage (max): В±20V Lead Free Status / Rohs Status: Compliant Mounting: Through Hole Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package Type: TO-220 Pin Count: 3 +Tab Polarity: N Power Dissipation: 125W Power Gain: Not RequireddB Type: Power MOSFET
• SPP11N60C3_09
  Infineon Technologies —
• SPP11N60C3_05
  Infineon Technologies —
• SPP11N60C3XKSA1
  Infineon Technologies — Infineon Technologies SPP11N60C3XKSA1 Continuous Drain Current: 11 A Drain-source Breakdown Voltage: 600 V Fall Time: 5 ns Forward Transconductance Gfs (max / Min): 8.3 S Gate Charge Qg: 45 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220 Part # Aliases: SP000681040 SPP11N60C3HKSA1 Power Dissipation: 125 W Resistance Drain-source Rds (on): 0.38 Ohms Rise Time: 5 ns Rohs: yes Typical Turn-off Delay Time: 44 ns RoHS: yes Drain-Source Breakdown Voltage: 600 V Resistance Drain-Source RDS (on): 0.38 Ohms Forward Transconductance gFS (Max / Min): 8.3 S Typical Turn-Off Delay Time: 44 ns
• SPP11N60C3XKSA1
  Infineon Technologies — Infineon Technologies SPP11N60C3XKSA1 Continuous Drain Current: 11 A Drain-source Breakdown Voltage: 600 V Fall Time: 5 ns Forward Transconductance Gfs (max / Min): 8.3 S Gate Charge Qg: 45 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220 Part # Aliases: SP000681040 SPP11N60C3HKSA1 Power Dissipation: 125 W Resistance Drain-source Rds (on): 0.38 Ohms Rise Time: 5 ns Rohs: yes Typical Turn-off Delay Time: 44 ns RoHS: yes Drain-Source Breakdown Voltage: 600 V Resistance Drain-Source RDS (on): 0.38 Ohms Forward Transconductance gFS (Max / Min): 8.3 S Typical Turn-Off Delay Time: 44 ns