Результаты поиска SPP02N60C3

Найдено 6 результатов.

• SPP02N60C3
  Infineon Technologies — MOSFET N-CH 650V 1.8A TO-220AB
• SPP02N60C3_09
  Infineon Technologies —
• SPP02N60C3_07
  Infineon Technologies —
• SPP02N60C3_07
  Infineon Technologies —
• SPP02N60C3XKSA1
  Infineon Technologies — Infineon Technologies SPP02N60C3XKSA1 Configuration: Single Continuous Drain Current: 1.8 A Drain-source Breakdown Voltage: 650 V Fall Time: 12 ns Gate Charge Qg: 9.5 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Part # Aliases: SP000681014 SPP02N60C3HKSA1 Power Dissipation: 25 W Resistance Drain-source Rds (on): 3 Ohms Rise Time: 3 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 68 ns RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 3 Ohms Typical Turn-Off Delay Time: 68 ns
• SPP02N60C3XKSA1
  Infineon Technologies — Infineon Technologies SPP02N60C3XKSA1 Configuration: Single Continuous Drain Current: 1.8 A Drain-source Breakdown Voltage: 650 V Fall Time: 12 ns Gate Charge Qg: 9.5 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Part # Aliases: SP000681014 SPP02N60C3HKSA1 Power Dissipation: 25 W Resistance Drain-source Rds (on): 3 Ohms Rise Time: 3 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 68 ns RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 3 Ohms Typical Turn-Off Delay Time: 68 ns