Результаты поиска SPB11N60C3

Найдено 7 результатов.

• SPB11N60C3
  Infineon Technologies — MOSFET N-CH 650V 11A D2PAK
• SPB11N60C3
  Infineon Technologies — MOSFET N-CH 650V 11A D2PAK
• SPB11N60C3
  Infineon Technologies — MOSFET N-CH 650V 11A D2PAK
• SPB11N60C3XT
  Infineon Technologies — Infineon Technologies SPB11N60C3XT Channel Mode: Enhancement Drain Current (max): 11A Drain Efficiency: Not Required% Drain-source On-res: 0.38Ohm Drain-source On-volt: 600V Frequency (max): Not RequiredMHz Gate-source Voltage (max): В±20V Mounting: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package Type: TO-263 Pin Count: 2 +Tab Polarity: N Power Dissipation: 125W Power Gain: Not RequireddB Type: Power MOSFET
• SPB11N60C3_07
  Infineon Technologies —
• SPB11N60C3SMD
  Infineon Technologies —
• SPB11N60C3 SMD
  Infineon Technologies —