Результаты поиска SPB10N10

Найдено 7 результатов.

• SPB10N10
  Infineon — Low Voltage MOSFETs - Power MOSFET, 100V, DВІPAK, RDSon=180mOhm, 10A, NL
• SPB10N10
  Infineon — N-Channel SIPMOS Power Transistor
• SPB10N10L
  Infineon Technologies — MOSFET N-CH 100V 10.3A D2PAK
• SPB10N10 G
  Infineon Technologies — Infineon Technologies SPB10N10 G Current - Continuous Drain (id) @ 25В° C: 10.3A Drain To Source Voltage (vdss): 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 19.4nC @ 10V Input Capacitance (ciss) @ Vds: 426pF @ 25V Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 50W Rds On (max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V Series: SIPMOSВ® Vgs(th) (max) @ Id: 4V @ 21ВµA Other Names: SP000102168, SPB10N10GXT
• SPB10N10L G
  Infineon Technologies — MOSFET N-CH 100V 10.3A D2PAK
• SPB10N10L G
  Infineon Technologies — MOSFET N-CH 100V 10.3A D2PAK
• SPB10N10L G
  Infineon Technologies — MOSFET N-CH 100V 10.3A D2PAK