Результаты поиска SI6966DQ-T1-E3
Найдено 2 результатов.
- Vishay/Siliconix — Dual MOSFETs 20V 4.5A 1W
- Vishay Intertechnology — Vishay Intertechnology SI6966DQ-T1-E3/BKN Channel Type: N Current, Drain: 4.5 A Esd Protected: 3000 V Fall Time: 20 ns Gate Charge, Total: 1.14 nC Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Package Type: TSSOP-8 Polarization: N-Channel Power Dissipation: 1.14 W Resistance, Drain To Source On: 0.03 Ohm Temperature, Operating, Maximum: +150 В°C Temperature, Operating, Minimum: –55 В°C Thermal Resistance, Junction To Ambient: 110 В°C/W Time, Rise: 15 ns Time, Turn-off Delay: 55 ns Time, Turn-on Delay: 20 ns Transconductance, Forward: 20 S Voltage, Breakdown, Drain To Source: 20 V Voltage, Diode Forward: 1.2 V Voltage, Drain To Source: 20 V Voltage, Forward, Diode: 1.2 V Voltage, Gate To Source: В±12 V