Результаты поиска SI4833DY

Найдено 6 результатов.

• SI4833DY
  Vishay — P-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode
• SI4833DY-E3
  Vishay/Siliconix — MOSFETs 30V 3.5A 2W
• SI4833DY_07
  Vishay Intertechnology —
• SI4833DY-T1
  Vishay Semiconductors — Vishay Semiconductors SI4833DY-T1 Case: SOP-8 Date_code: 2003+ Quantity: 3888 Product Category: MOSFET Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 3.5 A Resistance Drain-Source RDS (on): 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Fall Time: 8 ns Minimum Operating Temperature: - 55 C Power Dissipation: 2 W Rise Time: 9 ns Factory Pack Quantity: 2500 Tradename: Little Foot Plus Typical Turn-Off Delay Time: 14 ns
• SI4833DY-T1
  Vishay Semiconductors — Vishay Semiconductors SI4833DY-T1 Case: SOP-8 Date_code: 2003+ Quantity: 3888 Product Category: MOSFET Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 3.5 A Resistance Drain-Source RDS (on): 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Fall Time: 8 ns Minimum Operating Temperature: - 55 C Power Dissipation: 2 W Rise Time: 9 ns Factory Pack Quantity: 2500 Tradename: Little Foot Plus Typical Turn-Off Delay Time: 14 ns
• SI4833DY-T1-E3
  Vishay/Siliconix — P-Channel MOSFETs 30V 3.5A 2W