Результаты поиска SI2302DS,215

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• SI2302DS,215
  NXP Semiconductors — NXP Semiconductors SI2302DS,215 Configuration: Single Continuous Drain Current: 2.5 A Current - Continuous Drain (id) @ 25В° C: 2.5A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 8 S Gate Charge (qg) @ Vgs: 10nC @ 4.5V Gate Charge Qg: 5.4 nC Gate-source Breakdown Voltage: 8 V ID_COMPONENTS: 1950402 Input Capacitance (ciss) @ Vds: 230pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 830mW Power Dissipation: 0.83 W Rds On (max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Resistance Drain-source Rds (on): 56 mOhms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 650mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 56 mOhms Forward Transconductance gFS (Max / Min): 8 S Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 50 ns Part # Aliases: SI2302DS T/R Other Names: 934056632215 SI2302DS T/R