Результаты поиска QS6K21TR

Найдено 2 результатов.

• QS6K21TR
  Rohm — Rohm QS6K21TR Configuration: Dual Continuous Drain Current: 1 A Current - Continuous Drain (id) @ 25В° C: 1A Drain To Source Voltage (vdss): 45V Drain-source Breakdown Voltage: 45 V Fet Feature: Standard Fet Type: 2 N-Channel (Dual) Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: 12 V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TSMT6 Power - Max: - Power Dissipation: 1250 mW Rds On (max) @ Id, Vgs: - Resistance Drain-source Rds (on): 0.42 Ohm @ 4.5 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1.5V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 45 V Gate-Source Breakdown Voltage: 12 V Resistance Drain-Source RDS (on): 420 mOhms at 4.5 V Fall Time: 8 ns Rise Time: 8 ns Typical Turn-Off Delay Time: 16 ns Other Names: QS6K21TRTR
• QS6K21TR
  Rohm — Rohm QS6K21TR Configuration: Dual Continuous Drain Current: 1 A Current - Continuous Drain (id) @ 25В° C: 1A Drain To Source Voltage (vdss): 45V Drain-source Breakdown Voltage: 45 V Fet Feature: Standard Fet Type: 2 N-Channel (Dual) Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: 12 V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TSMT6 Power - Max: - Power Dissipation: 1250 mW Rds On (max) @ Id, Vgs: - Resistance Drain-source Rds (on): 0.42 Ohm @ 4.5 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1.5V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 45 V Gate-Source Breakdown Voltage: 12 V Resistance Drain-Source RDS (on): 420 mOhms at 4.5 V Fall Time: 8 ns Rise Time: 8 ns Typical Turn-Off Delay Time: 16 ns Other Names: QS6K21TRTR