Результаты поиска PZTA42,115
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- NXP Semiconductors — NXP Semiconductors PZTA42,115 Collector- Emitter Voltage Vceo Max: 300 V Configuration: Single Dual Collector Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 50MHz ID_COMPONENTS: 1949762 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 50 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.2W Power Dissipation: 1200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA Voltage - Collector Emitter Breakdown (max): 300V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 300 V Collector- Emitter Voltage VCEO Max: 300 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 50 MHz DC Collector/Base Gain hfe Min: 25 at 1 mA at 10 V, 40 at 10 mA at 10 V, 40 at 30 mA at 10 V DC Current Gain hFE Max: 25 at 1 mA at 10 V Maximum Power Dissipation: 1200 mW Factory Pack Quantity: 1000 Part # Aliases: PZTA42 T/R Other Names: 933982060115::PZTA42 T/R::PZTA42 T/R