Результаты поиска PZTA14,135

Найдено 2 результатов.

• PZTA14,135
  NXP Semiconductors — NXP Semiconductors PZTA14,135 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.25W Series: - Transistor Type: NPN - Darlington Vce Saturation (max) @ Ib, Ic: 1.5V @ 100ВµA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 10 V Maximum DC Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 10000 at 10 mA at 5 V Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 PZTA14 Other Names: 933982050135, PZTA14 /T3
• PZTA14,135
  NXP Semiconductors — NXP Semiconductors PZTA14,135 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.25W Series: - Transistor Type: NPN - Darlington Vce Saturation (max) @ Ib, Ic: 1.5V @ 100ВµA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 10 V Maximum DC Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 10000 at 10 mA at 5 V Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 PZTA14 Other Names: 933982050135, PZTA14 /T3